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| Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2720DF GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Designed to withstand VCES pulses up to 1700V. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat ts PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Storage time CONDITIONS VBE = 0 V TYP. 5.5 7.4 MAX. 1700 825 10 25 45 1.0 8.5 UNIT V V A A W V A s Ths 25 C IC = 5.5 A; IB = 1.38 A f = 16 kHz ICsat = 5.5 A; f = 16 kHz PINNING - SOT399 PIN 1 2 3 base collector emitter DESCRIPTION PIN CONFIGURATION case SYMBOL c b 123 case isolated e LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IB(AV) -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1700 825 10 25 10 14 150 6 45 150 150 UNIT V V A A A A mA A W C C average over any 20 ms period Ths 25 C ESD LIMITING VALUES SYMBOL VC PARAMETER CONDITIONS MIN. MAX. 10 UNIT kV Electrostatic discharge capacitor voltage Human body model (250 pF, 1.5 k) 1 Turn-off current. September 1997 1 Rev 1.300 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2720DF THERMAL RESISTANCES SYMBOL Rth j-hs Rth j-hs Rth j-a PARAMETER Junction to heatsink Junction to heatsink Junction to ambient CONDITIONS without heatsink compound with heatsink compound in free air TYP. 35 MAX. 3.7 2.8 UNIT K/W K/W K/W ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 C unless otherwise specified SYMBOL Visol PARAMETER Repetitive peak voltage from all three terminals to external heatsink CONDITIONS R.H. 65 % ; clean and dustfree MIN. TYP. MAX. 2500 UNIT V Cisol Capacitance from T2 to external f = 1 MHz heatsink - 22 - pF STATIC CHARACTERISTICS Ths = 25 C unless otherwise specified SYMBOL ICES ICES IEBO BVEBO VCEOsust VCEsat VBEsat hFE hFE PARAMETER Collector cut-off current 2 CONDITIONS VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 C VEB = 7.5 V; IC = 0 A IB = 1 mA IB = 0 A; IC = 100 mA; L = 25 mH IC = 5.5 A; IB = 1.38 A IC = 5.5 A; IB = 1.38 A IC = 100 mA; VCE = 5 V IC = 5.5 A; VCE = 1 V MIN. 7.5 825 4 TYP. 13.5 900 22 5.5 MAX. 1.0 2.0 1.0 1.0 1.0 7.5 UNIT mA mA mA V V V V Emitter cut-off current Emitter-base breakdown voltage Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain DYNAMIC CHARACTERISTICS Ths = 25 C unless otherwise specified SYMBOL PARAMETER Switching times (16 kHz line deflection circuit) CONDITIONS ICsat = 5.5 A; LC = 750 H; Cfb = 15.5 nF; VCC = 125 V; IB(end) = 1.2 A; LB = 6 H; -VBB = 4 V; -IBM = ICM/2; 7.4 0.7 8.5 0.9 s s TYP. MAX. UNIT ts tf Turn-off storage time Turn-off fall time 2 Measured with half sine-wave voltage (curve tracer). September 1997 2 Rev 1.300 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2720DF ICsat + 50v 100-200R IC 90 % Horizontal tf 10 % Oscilloscope IB t ts IBend Vertical 100R 6V 30-60 Hz 1R t - IBM Fig.1. Test circuit for VCEOsust. Fig.4. Switching times definitions. IC / mA + 150 v nominal adjust for ICsat Lc 250 200 100 IBend LB T.U.T. Cfb 0 VCE / V min VCEOsust -VBB Fig.2. Oscilloscope display for VCEOsust. Fig.5. Switching times test circuit. TRANSISTOR IC DIODE ICsat 100 hFE VCE = 5 V BU2720/22AF Ths = 25 C Ths = 85 C t IB IBend t 20us 26us 64us 10 VCE 1 0.01 0.1 1 10 100 t IC / A Fig.3. Switching times waveforms. Fig.6. DC current gain. hFE = f (IC) Parameter Ths (Low and high gain) September 1997 3 Rev 1.300 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2720DF hFE 100 VCE = 1 V BU2720/22AF Ths = 25 C Ths = 85 C PTOT / W 10 IC = 4.5 A f = 16 kHz Tj = 85 C BU2720AF 10 1 0.01 0.1 1 10 IC / A 100 1 0 0.5 1.0 1.5 IB / A 2.0 Fig.7. DC current gain. hFE = f (IC) Parameter Ths (Low and high gain) Fig.10. Limit Ptot; Tj = 85C Ptot = f (IB(end)); IC = 4.5 A; f = 16 kHz VCEsat / V 10 Tj = 85 C Tj = 25 C BU2720AF PTOT / W 10 IC = 5.5 A f = 16 kHz Tj = 85 C BU2720AF 1 IC/IB = 8 IC/IB = 4 0.1 0.01 0.1 1 10 IC / A 100 1 0.5 1 1.5 2 IB / A 2.5 Fig.8. Typical collector-emitter saturation voltage. VCEsat = f (IC); parameter IC/IB Fig.11. Limit Ptot; Tj = 85C Ptot = f (IB(end)); IC = 5.5 A; f = 16 kHz VBEsat / V 1 Tj = 85 C Tj = 25 C BU2720AF ts/tf / us 12 BU2720AF IC = 5.5 A 10 8 0.9 0.8 4.5 A 6 IC = 4.5 A 4 IC = 5.5 A 0.7 2 0.6 0 0.5 1 1.5 IB / A 2 0 0.5 1 1.5 2 IB / A 2.5 Fig.9. Typical base-emitter saturation voltage. VBEsat = f (IB); parameter IC Fig.12. Limit storage and fall time. ts = f (IB); tf = f (IB); Parameter IC; Tj = 85C; f = 16 kHz September 1997 4 Rev 1.300 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2720DF 120 110 100 90 80 70 60 50 40 30 20 10 0 PD% Normalised Power Derating with heatsink compound VCC LC IBend VCL LB T.U.T. CFB -VBB 0 20 40 60 80 Ths / C 100 120 140 Fig.13. Normalised power dissipation. PD% = 100PD/PD 25C = f (Ths) Fig.15. Test Circuit RBSOA. VCC = 150 V; -VBB = 1 - 4 V; LC = 1 mH; VCL = 1500 V; LB = 1 - 3 H; CFB = 1 - 4 nF; IB(end) = 0.8 - 4 A 10 Zth / (K/W) 1 0.5 0.2 0.1 0.05 0.02 0.1 0.01 D=0 0.001 1E-06 P D tp D= tp T t T 1E-04 1E-02 t/s 1E+00 IC / A 26 24 22 20 18 16 14 12 10 8 6 4 2 0 100 VCE / V BU2720AF/DF Area where fails occur 1000 1700 Fig.14. Transient thermal impedance. Zth j-hs = f(t); parameter D = tp/T Fig.16. Reverse bias safe operating area. Tj Tjmax September 1997 5 Rev 1.300 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2720DF MECHANICAL DATA Dimensions in mm Net Mass: 5.88 g 16.0 max 0.7 4.5 10.0 27 max 25.1 25.7 22.5 max 5.1 2.2 max 18.1 min 4.5 1.1 0.4 M 2 3.3 5.8 max 3.0 25 0.95 max 5.45 5.45 3.3 Fig.17. SOT399; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". September 1997 6 Rev 1.300 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2720DF DEFINITIONS Data sheet status Objective specification Product specification Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1997 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1997 7 Rev 1.300 |
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